Polarization due to emergent polarity in elemental semiconductor thinfilms under bending
Author(s): Tang, JK (Tang, J-K); Wang, YX (Wang, Y-X); Chang, K (Chang, K.); Zhang, DB (Zhang, D-B)
Source: JOURNAL OF PHYSICS-CONDENSED MATTER Volume: 35 Issue: 1 Article Number: 015501 DOI: 10.1088/1361-648X/ac9dd8 Published: JAN 11 2023
Abstract: Polarization via strain engineering provides a facial way to functionalize materials. We investigate the origin of electronic polarization in the bent elemental semiconductor thinfilms by combining analytical modeling with quantum mechanical simulation. A bond orbital model reveals a polarity of covalent bonds induced by strain gradient such that polarization along the strain gradient dimension can be induced, giving rise to the flexoelectric effect. At strain gradient 1/R=0.01 -1, the net charge differences between the two sides are 5x10-4e
Accession Number: WOS:000894536900001
ISSN: 0953-8984
eISSN: 1361-648X
Full Text: https://iopscience.iop.org/article/10.1088/1361-648X/ac9dd8
