Author(s): Liu, XQ (Liu, Xiangquan); Zheng, J (Zheng, Jun); Huang, QX (Huang, Qinxing); Pang, YQ (Pang, Yaqing); Zhang, DD (Zhang, Diandian); Zhu, YP (Zhu, Yupeng); Liu, Z (Liu, Zhi); Zuo, YH (Zuo, Yuhua); Cheng, BW (Cheng, Buwen)

Source: JOURNAL OF ALLOYS AND COMPOUNDS Volume: 934 Article Number: 167954 DOI: 10.1016/j.jallcom.2022.167954 Published: FEB 10 2023

Abstract: GePb/Ge multiple quantum well (MQW) structures with a Pb content of up to 7.2% were successfully grown on Ge(100) substrates via sputtering epitaxy. Scanning electron microscopy revealed that both the Pb content in the GePb layer and Ge layer thickness affect the Pb surface segregation. High-resolution X-ray diffraction and cross-sectional transmission electron microscopy indicated that the GePb/Ge MQW struc-tures had a high crystal quality. Moreover, the thermal stability of the GePb/Ge MQW structures was in-vestigated, and the MQW structures were found to be stable at an annealing temperature of 500 degrees C. The band gaps of the GePb/Ge MQWs were measured, and the band gap regulation caused by the quantum confinement effect was verified. These results indicate that the MQW structure is a promising approach for realizing efficient GePb light sources.(c) 2022 Elsevier B.V. All rights reserved.

Accession Number: WOS:000890750100001

ISSN: 0925-8388

eISSN: 1873-4669

Full Text: https://www.sciencedirect.com/science/article/pii/S0925838822043456?via%3Dihub