Author(s): Jiang, JK (Jiang, Junkai); Wang, GW (Wang, Guowai); Wu, DH (Wu, Donghai); Xu, YQ (Xu, Yingqiang); Chang, FR (Chang, Faran); Zhou, WG (Zhou, Wenguang); Li, N (LI, Nong); Jiang, DW (Jiang, Dongwei); Hao, HY (Hao, Hongyue); Cui, SN (Cui, Suning); Chen, WQ (Chen, Weiqiang); Xu, XY (Xu, Xueyue); Ni, HQ (Ni, Haiqiao); Ding, Y (Ding, Ying); Niu, ZC (Niu, Zhi-Chuan)

Source: OPTICS EXPRESS Volume: 30 Issue: 21 Pages: 38208-38215 DOI: 10.1364/OE.469147 Published: OCT 10 2022

Abstract: High-performance infrared p-i-n photodetectors based on InAs/InAsSb/AlAsSb superlattices on GaSb substrate have been demonstrated at 300K. These photodetectors exhibit 50% and 100% cut-off wavelength of similar to 3.2 pm and similar to 3.5 pm, respectively. Under-130 mV bias voltage, the device exhibits a peak responsivity of 0.56 A/W, corresponding to a quantum efficiency (QE) of 28%. The dark current density at 0 mV and-130 mV bias voltage are 8.17 x 10-2 A/cm2 and 5.02 x 10-1 A/cm2, respectively. The device exhibits a saturated dark current shot noise limited specific detectivity (D*) of 3.43 x 109 cmmiddotHz1/2/W (at a peak responsivity of 2.5 pm) under-130 mV of applied bias.(c) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement

Accession Number: WOS:000876303000006

PubMed ID: 36258387

ISSN: 1094-4087

Full Text: https://opg.optica.org/oe/fulltext.cfm?uri=oe-30-21-38208&id=507573