A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

1.3 mu m InGaAlAs/InP DFB Laser Integrated With SSC Having Reverse Mesa Ridge Waveguide

2022-11-11

 

Author(s): La, XB (La, Xiaobo); Li, ZY (Li, Zhenyu); Zhu, XY (Zhu, Xuyuan); Guo, J (Guo, Jing); Zhao, LJ (Zhao, Lingjuan); Wang, W (Wang, Wei); Liang, S (Liang, Song)

Source: IEEE PHOTONICS TECHNOLOGY LETTERS Volume: 34 Issue: 23 Pages: 1297-1299 DOI: 10.1109/LPT.2022.3212170 Published: DEC 1 2022

Abstract: We report the fabrication of a 1.3 mu m InGaAlAs/InP multi-quantum well (MQW) distributed feedback (DFB) laser integrated with a laterally tapered spot size converter (SSC) having a reverse mesa ridge waveguide. Because the top waveguide width of the reverse mesa waveguide is notably larger than the bottom width, a narrow SSC tip width, which is key for high quality SSC, can be fabricated by using conventional photolithography easily, helping to lower the device cost. At 25 degrees C, the emission wavelength is around 1314 nm and side mode suppression ratio larger than 45 dB can be obtained when the current is larger than 100 mA. The lateral and vertical divergence angles measured from the SSC facet of the laser are 11.8 and 13.2, respectively, which helps to ease the outcoupling of the light power.

Accession Number: WOS:000873825300003

ISSN: 1041-1135

eISSN: 1941-0174

Full Text: https://ieeexplore.ieee.org/document/9911628/



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明