Author(s): Wang, BB (Wang, Baibin); Yang, J (Yang, Jing); Liang, F (Liang, Feng); Chen, P (Chen, Ping); Liu, ZS (Liu, Zongshun); Zhao, DG (Zhao, Degang)

Source: OPTICS EXPRESS Volume: 30 Issue: 20 Pages: 37131-37140 Article Number: 471430 DOI: 10.1364/OE.471430 Published: SEP 26 2022

Abstract: We have observed the transient behavior in the AlGaN photoluminescence. Under an excitation of 325 nm He-Cd laser beam, the blue luminescence (BL) bands and yellow luminescence (YL) bands of AlGaN vary with increasing illumination time. We propose that the chemical reactions between BL-related CNON-Hi (CN-Hi) and YL-related CN-Hi (CN) defect states are the cause of such a phenomenon. The BL transition temperature (Tt) is defined as the temperature at which the intensity of BL bands induced by CNON-Hi is equal to that originated from CN-Hi. Only at Tt, BL shows a peak energy variation due to the exposure. The Tt of AlGaN is higher than what is similarly detected in GaN because of the high reactivity of Al to O.(c) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement

Accession Number: WOS:000869760200001

PubMed ID: 36258630

ISSN: 1094-4087

Full Text: https://opg.optica.org/oe/fulltext.cfm?uri=oe-30-20-37131&id=506529