Electron tunneling through double-electric barriers on HgTe/CdTe heterostructure interface
Author(s): Lin, LZ (Lin, Liang-Zhong); Ling, YY (Ling, Yi-Yun); Zhang, D (Zhang, Dong); Wu, ZH (Wu, Zhen-Hua)
Source: CHINESE PHYSICS B Volume: 31 Issue: 11 Article Number: 117201 DOI: 10.1088/1674-1056/ac7a0f Published: OCT 1 2022
Abstract: We investigate theoretically the carrier transport in a two-dimensional topological insulator of (001) HgTe/CdTe quantum-well heterostructure with inverted band, and find distinct switchable features of the transmission spectra in the topological edge states by designing the double-electric modulation potentials. The transmission spectra exhibit the significant Fabry-Perot resonances for the double-electric transport system. Furthermore, the transmission properties show rich behaviors when the Fermi energy lies in the different locations in the energy spectrum and the double-electric barrier regions. The opacity and transparency of the double-modulated barrier regions can be controlled by tuning the modulated potentials, Fermi energy and the length of modulated regions. This electrical switching behavior can be realized by tuning the voltages applied on the metal gates. The Fabry-Perot resonances leads to oscillations in the transmission which can be observed in experimentally. This electric modulated-mechanism provides us a realistic way to switch the transmission in edge states which can be constructed in low-power information processing devices.
Accession Number: WOS:000870855300001
ISSN: 1674-1056
eISSN: 2058-3834
Full Text: https://iopscience.iop.org/article/10.1088/1674-1056/ac7a0f