Author(s): Ran, JX (Ran, Junxue); Chen, RF (Chen, Renfeng); He, R (He, Rui); Ji, XL (Ji, Xiaoli); Yang, JK (Yang, Jiankun); Wang, JX (Wang, Junxi); Li, JM (Li, Jinmin); Wei, TB (Wei, Tongbo)

Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY Volume: 37 Issue: 12 Article Number: 125001 DOI: 10.1088/1361-6641/ac9997 Published: DEC 1 2022

Abstract: In this letter, quasi-vertical Schottky barrier diodes (SBDs) based on AlN/Al0.6Ga0.4N heterostructure are fabricated and temperature-dependent current transport is systematically investigated. Benefited from the AlN/Al0.6Ga0.4N heterostructure with high net doping concentration of similar to 1 x 10(18) cm(-3) in Al0.6Ga0.4N, the device demonstrates lower ideality factor of 2.95, high on/off current ratio of similar to 10(8), the on-current of above 40 A cm(-2) which is two order magnitude higher than that of the state-of-the-art AlN SBDs. The barrier inhomogeneity is characterized by the model of Gaussian distribution, and the reverse current observed is identified to be traps-related leakage process such as Poole-Frenkel emission and trap assisted tunneling. This work reveals the heterostructure engineering is an alternative pathway to overcome the difficulty of AlN-based SBDs.

Accession Number: WOS:000870476100001

ISSN: 0268-1242

eISSN: 1361-6641

Full Text: https://iopscience.iop.org/article/10.1088/1361-6641/ac9997