Author(s): Zhao, S (Zhao, Shuai); Yuan, GD (Yuan, Guodong); Zhang, D (Zhang, Di); Liu, YM (Liu, Yumeng); Lu, J (Lu, Jun); Han, WH (Han, Weihua); Luo, JW (Luo, Junwei)

Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 55 Issue: 49 Article Number: 495105 DOI: 10.1088/1361-6463/ac9914 Published: DEC 8 2022

Abstract: The exploration of multi-gate-controlled electron transport characteristics is always a research focus in Si-based device development and optimization. In this work, we report individual and dual gate-controlled energy band regulations of 30 nm-thick Si membrane and the resulted electron transportations at 10-300 K. It is discovered that the fine energy band structure is a key element to determine electron transport behaviors in fully-depleted silicon-on-insulator. Furthermore, either the front or the back gate bias can modify the energy band bending and sub-band gap, change charged body distribution and intersub-band transition probability, and thus adjust electron mobility and device performance. This dual gate coupling effect together with the proposed gate-controlled sub-band structure model is confirmed by magnetotransport experiments at 1.6 K. Notably, our work presents the coupled gate controlling effects within ultrathin Si film, and gives a physical insight into electron structure modulating, which may promote the evolution of Si-based device applications in many domains.

Accession Number: WOS:000870486800001

ISSN: 0022-3727

eISSN: 1361-6463

Full Text: https://iopscience.iop.org/article/10.1088/1361-6463/ac9914