Author(s): Fu, X (Fu, Xin); Yang, SL (Yang, Shanglin); Niu, JQ (Niu, Jiaqi); Zhang, GL (Zhang, Gaolu); Jia, H (Jia, Hao); Yang, L (Yang, Lin)

Source: IEEE PHOTONICS TECHNOLOGY LETTERS Volume: 34 Issue: 22 Pages: 1242-1245 DOI: 10.1109/LPT.2022.3210279 Published: NOV 15 2022

Abstract: Mode-division multiplexing (MDM) is a promising technique to further enhance the channel capacity in modern optical communications. Tunability of the mode converter in MDM systems is very important for flexible network deployment. In this letter, we demonstrate a high-speed tunable dual-mode converter on silicon-on-insulator (SOI) platform for MDM networks. The proposed device is based on carrier depletion mechanism, which enables ultrafast conversion between TE0 and TE1 mode on the order of sub-nanoseconds. The experimental results show that the insertion losses are less than 4.6 dB and the crosstalk values are lower than -19 dB in the wavelength range from 1525 nm to 1565 nm. To verify the function of high-speed mode transition, 10 Gb/s on-off key optical payload signal is performed to control the dual-mode converter. The performance indicates this device has great potential to be a pivotal component in high-speed MDM networks.

Accession Number: WOS:000866497300003

ISSN: 1041-1135

eISSN: 1941-0174

Full Text: https://ieeexplore.ieee.org/document/9904585/