Author(s): Yang, J (Yang, J.); Zhao, D (Zhao, D. G.); Liu, Z (Liu, Z. S.); Liang, F (Liang, F.); Chen, P (Chen, P.); Wang, B (Wang, B. B.); Zhang, Y (Zhang, Y. H.); Zhang, Z (Zhang, Z. Z.)

Source: OPTICS AND LASER TECHNOLOGY Volume: 156 Article Number: 108574 DOI: 10.1016/j.optlastec.2022.108574 Published: DEC 2022

Abstract: Performance of UV laser diodes (LDs) with different structure of waveguide (WG) layers is investigated by simulation and experimental methods. It is found that the threshold current firstly decreases and then increases when the GaN WG thickness increases from 80 to 400 nm, and it also increases when a part of GaN WG layer is changed to be AlGaN. The variation of slope efficiency is accompanied with a decrease of threshold current. It is found that the optical absorption loss decreases, the carrier loss in upper WG layer increases and hole injection efficiency decreases. Finally, a high continuous-wave (CW) output power of 3.8 W at lambda = 386.5 nm is achieved by using 120 nm-thick GaN WG layers. The threshold current density is 1.78 kA/cm(2), the slope efficiency is about 1.5 W/A below the injection current of 2 A, and the highest wall plug efficiency (WPE) is about 20.2% at an injection current of 2.5 A.

Accession Number: WOS:000864482600003

ISSN: 0030-3992

eISSN: 1879-2545

Full Text: https://www.sciencedirect.com/science/article/pii/S003039922200723X?via%3Dihub