Author(s): Chen, JR (Chen, Jingren); Meng, JH (Meng, Junhua); Cheng, Y (Cheng, Yong); Shi, YM (Shi, Yiming); Wang, GK (Wang, Gaokai); Huang, JD (Huang, Jidong); Zhang, SY (Zhang, Siyu); Yin, ZG (Yin, Zhigang); Zhang, XW (Zhang, Xingwang)

Source: APPLIED SURFACE SCIENCE Volume: 604 Article Number: 154559 DOI: 10.1016/j.apsusc.2022.154559 Published: DEC 1 2022

Abstract: Integrating two-dimensional ultra-wide band gap hexagonal boron nitride (h-BN) on beta-Ga2O3 surface into van der Waals heterostructures is of great interest for developing novel high-power devices and optoelectronic devices because of their unique properties. The energy band alignment at the heterointerface is critical for device design, however, the band alignment of h-BN/beta-Ga2O3 heterojunction has not been investigated to date. In this work, the h-BN/B-Ga2O3 heterostructure is constructed by directly growing h-BN few-layer on the beta-Ga2O3 single crystal substrate using ion beam sputtering deposition method. The high-quality few-layer h-BN with the abrupt interface and smooth surface allow for the accurate determination of band alignment at the h-BN/beta-Ga2O3 heterointerface by X-ray photoelectron spectroscopies. The valence and conduction band offsets are determined to be 0.47 and 1.42 eV for the h-BN/beta-Ga2O3 heterostructure, respectively, with a type-II staggered band alignment. Furthermore, the electronic structures of h-BN/B-Ga2O3 heterostructure are also investigated experimentally and theoretically. These results indicate that the h-BN/B-Ga2O3 heterostructure has great potential in (opto)electronic devices.

Accession Number: WOS:000863054300001

ISSN: 0169-4332

eISSN: 1873-5584

Full Text: https://www.sciencedirect.com/science/article/pii/S0169433222020918?via%3Dihub