Author(s): Zhang, YH (Zhang, Yuheng); Yang, J (Yang, Jing); Zhao, DG (Zhao, Degang); Liang, F (Liang, Feng); Chen, P (Chen, Ping); Liu, ZS (Liu, Zongshun)

Source: APPLIED SURFACE SCIENCE Volume: 606 Article Number: 154919 DOI: 10.1016/j.apsusc.2022.154919 Published: DEC 30 2022

Abstract: In this study, we found that the two-step method for heteroepitaxial AlN on sapphire has some limitations. Growing the buffer layer for a too long time will make it challenging to obtain a flat film surface. So, three-step-growth was introduced and an intermediate layer was inserted. In this step, the surface morphology of samples is controlled by NH3 flow rate and the dislocation density is further reduced. Finally, we are able to obtain high-quality AlN samples grown by metalorganic chemical vapor deposition at 1120 ?, which is a relatively low temperature for the AlN epitaxial layers. The X-ray diffraction omega-scan full width at half maximum values for (002) and (102) reflections are 172 and 145 arcsec, respectively.

Accession Number: WOS:000864607100002

ISSN: 0169-4332

eISSN: 1873-5584

Full Text: https://www.sciencedirect.com/science/article/pii/S0169433222024473?via%3Dihub