Author(s): Lian, XJ (Lian, Xiaojuan); Liu, CH (Liu, Cunhu); Fu, JK (Fu, Jinke); Liu, XY (Liu, Xiaoyan); Ren, QY (Ren, Qingying); Wan, X (Wan, Xiang); Xiao, WN (Xiao, Wanang); Cai, ZK (Cai, Zhikuang); Wang, L (Wang, Lei)

Source: NANOTECHNOLOGY Volume: 33 Issue: 49 Article Number: 495204 DOI: 10.1088/1361-6528/ac89f6 Published: DEC 3 2022

Abstract: Phase-change optical device has recently gained tremendous interest due to its ultra-fast transmitting speed, multiplexing and large bandwidth. However, majority of phase-change optical devices are only devoted to on-chip components such as optical tensor core and optical main memory, while developing a secondary storage memory in an optical manner is rarely reported. To address this issue, we propose a novel phase-change optical memory based on plasmonic resonance effects for secondary storage applications. Such design makes use of the plasmonic dimer nanoantenna to generate plasmonic resonance inside the chalcogenide alloy, and thus enables the performance improvements in terms of energy consumption and switching speed. It is found that choosing height, radius, and separation of the plasmonic nanoantenna as 10 nm, 150 nm, and 10 nm, respectively, allows for a write/erase energies of 100 and 240 pJ and a write/erase speed of 10 ns for crystallization and amorphization processes, respectively. Such performance merits encouragingly prevail conventional secondary storage memories and thus pave a route towards the advent of all-optical computer in near future.

Accession Number: WOS:000859335000001

PubMed ID: 35973383

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

LIAN, XIAOJUAN                  0000-0001-6390-6553

ISSN: 0957-4484

eISSN: 1361-6528

Full Text: https://iopscience.iop.org/article/10.1088/1361-6528/ac89f6