Author(s): Huang, YJ (Huang, Yujie); Yang, J (Yang, Jing); Zhao, DG (Zhao, Degang); Zhang, YH (Zhang, Yuheng); Liu, ZS (Liu, Zongshun); Liang, F (Liang, Feng); Chen, P (Chen, Ping)

Source: NANOMATERIALS Volume: 12 Issue: 18 Article Number: 3148 DOI: 10.3390/nano12183148 Published: SEP 2022

Abstract: The spectral response properties of AlGaN Schottky barrier detectors with different Al content were investigated. It was found that the responsivity of AlGaN detectors decreases with increase in Al content in AlGaN. It was found that neither dislocation density nor the concentration of carbon and oxygen impurities made any remarkable difference in these AlGaN devices. However, the positron annihilation experiments showed that the concentration of Al or Ga vacancy defects (more likely Ga vacancy defects) in AlGaN active layers increased with the increase in Al content. It is assumed that the Al or Ga vacancy defects play a negative role in a detector's performance, which increases the recombination of photogenerated carriers and reduces the detector responsivity. It is necessary to control the concentration of vacancy defects for the high performance AlGaN detectors.

Accession Number: WOS:000856932400001

PubMed ID: 36144936

eISSN: 2079-4991

Full Text: https://www.mdpi.com/2079-4991/12/18/3148