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Wafer-scale MoS2 with water-vapor assisted showerhead MOCVD

2022-10-08

 

Author(s): Macha, M (Macha, Michal); Ji, HG (Ji, Hyun Goo); Tripathi, M (Tripathi, Mukesh); Zhao, Y (Zhao, Yanfei); Thakur, M (Thakur, Mukeshchand); Zhang, J (Zhang, Jing); Kis, A (Kis, Andras); Radenovic, A (Radenovic, Aleksandra)

Source: NANOSCALE ADVANCES DOI: 10.1039/d2na00409g Early Access Date: SEP 2022

Abstract: Among numerous thin film synthesis methods, metalorganic chemical vapor deposition performed in a showerhead reactor is the most promising one for broad use in scalable and commercially adaptable two-dimensional material synthesis processes. Adapting the most efficient monolayer growth methodologies from tube-furnace systems to vertical-showerhead geometries allows us to overcome the intrinsic process limitations and improve the overall monolayer yield quality. Here, we demonstrate large-area, monolayer molybdenum disulphide growth by combining gas-phase precursor supply with unique tube-furnace approaches of utilizing sodium molybdate pre-seeding solution spincoated on a substrate along with water vapor added during the growth step. The engineered process yields a high-quality, 4-inch scale monolayer film on sapphire wafers. The monolayer growth coverage, average crystal size and defect density were evaluated using Raman and photoluminescence spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy and scanning transmission electron microscopy imaging. Our findings provide a direct step forward toward developing a reproducible and large-scale MoS2 synthesis with commercial showerhead reactors.

Accession Number: WOS:000856043200001

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

Radenovic, Aleksandra                  0000-0001-8194-2785

ISSN: 2516-0230

Full Text: https://pubs.rsc.org/en/content/articlelanding/2022/NA/D2NA00409G



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