A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

Radiative and Non-Radiative Exciton Recombination Processes in a Chemical Vapor Deposition-Grown MoSe2 Film

2022-09-27

 

Author(s): Wang, J (Wang, Jian); Huang, JH (Huang, Junhui); Li, YH (Li, Yuanhe); Ding, K (Ding, Kun); Jiang, DS (Jiang, Desheng); Dou, XM (Dou, Xiuming); Sun, BQ (Sun, Baoquan)

Source: JOURNAL OF PHYSICAL CHEMISTRY C DOI: 10.1021/acs.jpcc.2c04550 Early Access Date: AUG 2022

Abstract: In transition metal dichalcogenides (TMDs), defects and stress in thin films significantly affect the dynamic of exciton recombination. Here, we report that a MoSe2 continuous film, grown on a SiO2/Si substrate by chemical vapor deposition (CVD), shows an exceptionally strong photoluminescence (PL) and a rather long lifetime (similar to 154 ns) at 6 K. However, when the film is transferred to another similar substrate, its PL intensity is remarkably reduced by almost 80. By analyzing temperature dependent PL and time-resolved PL spectra for the as-grown and transferred films, it reveals that the strong PL of the as-grown MoSe2 sample comes from the exciton recombination from the band tails. We believe that the tensile strain introduced during CVD growth can effectively suppress the non-radiative channels of the excitons in the localized band tails. Our studies demonstrate that the effect of defects and stress on the kinetics of exciton recombination in MoSe2 is of great significance for the application of TMDs in optoelectronics.

Accession Number: WOS:000854013300001

ISSN: 1932-7447

eISSN: 1932-7455

Full Text: https://pubs.acs.org/doi/10.1021/acs.jpcc.2c04550



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明