Author(s): Wang, H (Wang, Hong); Lv, ZR (Lv, Zunren); Wang, S (Wang, Shuai); Wang, HM (Wang, Haomiao); Chai, HY (Chai, Hongyu); Yang, XG (Yang, Xiaoguang); Meng, L (Meng, Lei); Ji, C (Ji, Chen); Yang, T (Yang, Tao)

Source: CHINESE PHYSICS B Volume: 31 Issue: 9 Article Number: 098104 DOI: 10.1088/1674-1056/ac657f Published: SEP 1 2022

Abstract: We report on the fabrication and characterization of InAs/GaAs chirped multilayer quantum-dot superluminescent diodes (CMQD-SLDs) with and without direct Si doping in QDs. It was found that both the output power and the spectral width of the CMQD-SLDs were significantly enhanced by direct Si doping in the QDs. The output power and spectral width have been increased by approximately 18.3% and 40%, respectively. Moreover, we shortened the cavity length of the doped CMQD-SLD and obtained a spectral width of 106 nm. In addition, the maximum output power and spectral width of the CMQD-SLD doped directly with Si can be further increased to 16.6 mW and 114 nm, respectively, through anti-reflection coating and device packaging. The device exhibited the smallest spectral dip of 0.2 dB when the spectrum was widest. The improved performances of the doped CMQD-SLD can be attributed to the direct doping of Si in the QDs, optimization of device structure and device packaging.

Accession Number: WOS:000853987600001

ISSN: 1674-1056

eISSN: 2058-3834

Full Text: https://iopscience.iop.org/article/10.1088/1674-1056/ac657f