Author(s): Lin, FQ (Lin, Fang-Qi); Li, N (Li, Nong); Zhou, WG (Zhou, Wen-Guang); Jiang, JK (Jiang, Jun-Kai); Chang, FR (Chang, Fa-Ran); Li, Y (Li, Yong); Cui, SN (Cui, Su-Ning); Chen, WQ (Chen, Wei-Qiang); Jiang, DW (Jiang, Dong-Wei); Hao, HY (Hao, Hong-Yue); Wang, GW (Wang, Guo-Wei); Xu, YQ (Xu, Ying-Qiang); Niu, ZC (Niu, Zhi-Chuan)

Source: CHINESE PHYSICS B Volume: 31 Issue: 9 Article Number: 098504 DOI: 10.1088/1674-1056/ac615d Published: SEP 1 2022

Abstract: By optimizing the V/III beam-equivalent pressure ratio, a high-quality InAs/GaSb type-II superlattice material for the long-wavelength infrared (LWIR) range is achieved by molecular beam epitaxy (MBE). High-resolution x-ray diffraction (HRXRD), atomic force microscopy (AFM), and Fourier transform infrared (FTIR) spectrometer are used to characterize the material growth quality. The results show that the full width at half maximum (FWHM) of the superlattice zero-order diffraction peak, the mismatching of the superlattice zero-order diffraction peak between the substrate diffraction peaks, and the surface roughness get the best results when the beam-equivalent pressure (BEP) ratio reaches the optimal value, which are 28 arcsec, 13 arcsec, and 1.63 angstrom, respectively. The intensity of the zero-order diffraction peak is strongest at the optimal value. The relative spectral response of the LWIR detector shows that it exhibits a 100% cut-off wavelength of 12.6 mu m at 77 K. High-quality epitaxial materials have laid a good foundation for preparing high-performance LWIR detector.

Accession Number: WOS:000853992500001

ISSN: 1674-1056

eISSN: 2058-3834

Full Text: https://iopscience.iop.org/article/10.1088/1674-1056/ac615d