Author(s): Li, YF (Li, Yifan); Ni, T (Ni, Tao); Wang, JJ (Wang, Juanjuan); Gao, LC (Gao, Linchun); Li, XJ (Li, Xiaojing); Li, JJ (Li, Jiangjiang); Bu, JH (Bu, Jianhui); Li, DL (Li, Duoli); Xu, LD (Xu, Lida); Wang, RJ (Wang, Runjian); Zeng, CB (Zeng, Chuanbin); Wang, ZJ (Wang, Zhijie); Li, B (Li, Bo); Zhao, FZ (Zhao, Fazhan); Luo, JJ (Luo, Jiajun)

Source: IEEE TRANSACTIONS ON ELECTRON DEVICES DOI: 10.1109/TED.2022.3201439 Early Access Date: SEP 2022

Abstract: The self-heating effect (SHE) of silicon-on-insulator (SOI) MOSFETs brings challenges to the measurement and modeling of transient electrothermal characteristics. For the first time, this study obtains the transient two-stage thermal equivalent RC network of SOI MOSFETs by nano double-pulse measurement combined with network identification by a deconvolution (NID) method. The two-stage model provides a comprehensive reference for the accumulation of residual heat under dynamic operation. We reveal that since the oxide layer acts as a thermal reservoir, the heat dissipation process can be divided into three phases according to thermal time constants. The results of geometry dependence of thermal parameters show that the gate length and width-to-length ratio (W/L) increase: the thermal resistance trend of both stages decreases, the one-stage thermal time constant increases, but the two-stage thermal time constant decreases. Also, as the scaling of device dimension and mutual thermal coupling, the thermal transient response boosts significantly.

Accession Number: WOS:000852216800001

ISSN: 0018-9383

eISSN: 1557-9646

Full Text: https://ieeexplore.ieee.org/document/9877837/