Author(s): Zhang, L (Zhang, Li); Pan, D (Pan, Dong); Chen, YJ (Chen, Yuanjie); Zhao, JH (Zhao, Jianhua); Xu, HQ (Xu, Hongqi)

Source: CHINESE PHYSICS B Volume: 31 Issue: 9 Article Number: 098507 DOI: 10.1088/1674-1056/ac7455 Published: SEP 1 2022

Abstract: A gated Hall-bar device is made from an epitaxially grown, free-standing InSb nanosheet on a hexagonal boron nitride (hBN) dielectric/graphite gate structure and the electron transport properties in the InSb nanosheet are studied by gate-transfer characteristic and magnetotransport measurements at low temperatures. The measurements show that the carriers in the InSb nanosheet are of electrons and the carrier density in the nanosheet can be highly efficiently tuned by the graphite gate. The mobility of the electrons in the InSb nanosheet is extracted from low-field magneotransport measurements and a value of the mobility exceeding similar to 1.8 x 10(4) cm(2).V-1.s(-1) is found. High-field magentotransport measurements show well-defined Shubnikov-de Haas (SdH) oscillations in the longitudinal resistance of the InSb nanosheet. Temperature-dependent measurements of the SdH oscillations are carried out and key transport parameters, including the electron effective mass m* similar to 0.028m(0) and the quantum lifetime tau similar to 0.046 ps, in the InSb nanosheet are extracted. It is for the first time that such experimental measurements have been reported for a free-standing InSb nanosheet and the results obtained indicate that InSb nanosheet/hBN/graphite gate structures can be used to develop advanced quantum devices for novel physics studies and for quantum technology applications.

Accession Number: WOS:000849943500001

ISSN: 1674-1056

eISSN: 2058-3834

Full Text: https://iopscience.iop.org/article/10.1088/1674-1056/ac7455