Author(s): Xu, PF (Xu, Pengfei); Jin, P (Jin, Peng); Feng, MY (Feng, Mengyang); Qu, PF (Qu, Pengfei); Huo, XD (Huo, Xiaodi); Wu, J (Wu, Ju); Wang, ZG (Wang, Zhanguo)

Source: MICRO AND NANOSTRUCTURES Volume: 169 Article Number: 207368 DOI: 10.1016/j.micrna.2022.207368 Published: SEP 2022

Abstract: A vertical diamond deep-depletion metal-insulator-semiconductor field-effect transistor (D3MISFET) with specific structural parameters and doping distribution is simulated in this paper. The vertical structure requires only p-type doping and has a lower on-resistance, which greatly improves the output capability of the transistor. The transfer characteristics, output characteristics and off-state breakdown characteristics of the vertical D3MISFET were given. The results show that the vertical D3MISFET has better output capability than the lateral-structure D3MISFET with the contribution of space charge transport limited current, and the output cur-rent can reach a high value of 700 mA/mm. An increase in temperature promotes a further in-crease in the output current of the device. The device switching ratio is greater than 10(9), and the breakdown voltage is 79 V.

Accession Number: WOS:000849818700003

eISSN: 2773-0123

Full Text: https://www.sciencedirect.com/science/article/pii/S2773012322001819?via%3Dihub