Author(s): Sun, X (Sun, Xiao); Cheng, WQ (Cheng, Weiqing); Sun, YM (Sun, Yiming); Ye, SW (Ye, Shengwei); Al-Moathin, A (Al-Moathin, Ali); Huang, YG (Huang, Yongguang); Zhang, RK (Zhang, Ruikang); Liang, S (Liang, Song); Qiu, BC (Qiu, Bocang); Xiong, JC (Xiong, Jichuan); Liu, XF (Liu, Xuefeng); Marsh, JH (Marsh, John H.); Hou, LP (Hou, Lianping)

Source: PHOTONICS Volume: 9 Issue: 8 Article Number: 564 DOI: 10.3390/photonics9080564 Published: AUG 2022

Abstract: A novel AlGaInAs/InP electro-absorption modulated laser (EML) with a simple fabrication process is proposed, in which the electro-absorption modulator (EAM) has a 10 nm blueshift induced by quantum well intermixing (QWI) and is monolithically integrated with a sidewall grating distributed-feedback (DFB) laser working at 1.55 mu m wavelength. The extent of the QWI process is characterized by a diffusion length. The quantum confined Stark effect (QCSE) is simulated in terms of extinction ratio (ER) and chirp for bias electric fields from 0 kV/cm to 200 kV/cm and for different amounts of intermixing. The results indicate that for a 150 mu m-long EAM with a 10 nm blueshift induced by QWI, an ER of 40 dB is obtained at 2.5 V reverse bias with no penalty in chirp compared to an as-grown quantum well (QW) and the insertion loss at 0 V bias is 0.11 dB for 1.55 mu m operation wavelength. The simulated -3 dB bandwidth of the electrical to optical power response is 22 GHz.

Accession Number: WOS:000845722500001

eISSN: 2304-6732

Full Text: https://www.mdpi.com/2304-6732/9/8/564