Author(s): Shang, XJ (Shang, Xiangjun); Liu, HQ (Liu, Hanqing); Su, XB (Su, Xiangbin); Li, SL (Li, Shulun); Hao, HM (Hao, Huiming); Dai, DY (Dai, Deyan); Chen, ZS (Chen, Zesheng); Ni, HQ (Ni, Haiqiao); Niu, ZC (Niu, Zhichuan)

Source: CRYSTALS Volume: 12 Issue: 8 Article Number: 1116 DOI: 10.3390/cryst12081116 Published: AUG 2022

Abstract: In this work, we measure polarization-resolved photoluminescence spectra from excitonic complexes in tens of single InAs/GaAs quantum dots (QDs) at the telecom 0-band with strain-coupled bilayer structure. QDs often show fine-structure splitting (FSS) similar to 100 mu eV in uniform anisotropy and valence-band mixing of heavy holes (HH) and light holes (LH); the biaxial strain also induces LH excitons with small FSS (especially XX, <5 mu eV, 70% of QDs); delocalized LH reduces the Coulomb interaction between holes V-hh and enhances population on LH excitons XX, XX11, X-11(+) and XX21+.

Accession Number: WOS:000846976400001

eISSN: 2073-4352

Full Text: https://www.mdpi.com/2073-4352/12/8/1116