Author(s): Lv, ZR (Lv, Zun-Ren); Wang, S (Wang, Shuai); Wang, H (Wang, Hong); Wang, HM (Wang, Hao-Miao); Chai, HY (Chai, Hong-Yu); Yang, XG (Yang, Xiao-Guang); Meng, L (Meng, Lei); Ji, C (Ji, Chen); Yang, T (Yang, Tao)

Source: APPLIED PHYSICS LETTERS Volume: 121 Issue: 2 Article Number: 021105 DOI: 10.1063/5.0096367 Published: JUL 11 2022

Abstract: We report on significantly enhanced performances of 1.3 mu m InAs/GaAs quantum dot (QD) lasers by spatially separated dual-doping, including p-type modulation doping in barrier layers and n-type direct doping in QDs simultaneously. The QD lasers are a ridge waveguide of 6 x 1000 mu m(2) with uncoated facets, whose active region consists of eight stacked InAs QD layers. Compared with the conventional single p-type modulation doped (p-doped) QD laser, the dually doped QD laser achieves a reduced threshold current from 51.07 to 43 mA, an increased single-sided slope efficiency from 0.18 to 0.25 W/A at 25 degrees C, and an increased characteristic temperature T-0 from 654 to 7917K between 15 and 85 degrees C. Furthermore, the continuous wave output power of the dually doped QD laser exceeds 20 mW without any attenuation at 85 degrees C, whereas that of the p-doped one appears to be saturated at 14.08 mW. The results presented here have important implications for realizing high-performance QD lasers emitting at 1.3 mu m to various applications. Published under an exclusive license by AIP Publishing.

Accession Number: WOS:000828578500001

ISSN: 0003-6951

eISSN: 1077-3118

Full Text: https://aip.scitation.org/doi/10.1063/5.0096367