Author(s): Yin, Y (Yin, Yue); Liu, BY (Liu, Bingyao); Chen, Q (Chen, Qi); Chen, ZL (Chen, Zhaolong); Ren, F (Ren, Fang); Zhang, S (Zhang, Shuo); Liu, ZT (Liu, Zhetong); Wang, R (Wang, Rong); Liang, M (Liang, Meng); Yan, JC (Yan, Jianchang); Sun, JY (Sun, Jingyu); Yi, XY (Yi, Xiaoyan); Wei, TB (Wei, Tongbo); Wang, JX (Wang, Junxi); Li, JM (Li, Jinmin); Liu, ZF (Liu, Zhongfan); Gao, P (Gao, Peng); Liu, ZQ (Liu, Zhiqiang)

Source: SMALL Article Number: 2202529 DOI: 10.1002/smll.202202529 Early Access Date: AUG 2022

Abstract: Use of 2D materials as buffer layers has prospects in nitride epitaxy on symmetry mismatched substrates. However, the control of lattice arrangement via 2D materials at the heterointerface presents certain challenges. In this study, the epitaxy of single-crystalline GaN film on WS2-glass wafer is successfully performed by using the strong polarity of WS2 buffer layer and its perfectly matching lattice geometry with GaN. Furthermore, this study reveals that the first interfacial nitrogen layer plays a crucial role in the well-constructed interface by sharing electrons with both Ga and S atoms, enabling the single-crystalline stress-free GaN, as well as a violet light-emitting diode. This study paves a way for the heterogeneous integration of semiconductors and creates opportunities to break through the design and performance limitations, which are induced by substrate restriction, of the devices.

Accession Number: WOS:000842332800001

PubMed ID: 35986697

ISSN: 1613-6810

eISSN: 1613-6829

Full Text: https://onlinelibrary.wiley.com/doi/10.1002/smll.202202529