Author(s): Zhang, XD (Zhang, Xiaodi); Chen, JD (Chen, Jundong); Han, WH (Han, Weihua); Ge, YD (Ge, Yandong); Guo, YY (Guo, Yangyan); Dong, XZ (Dong, Xianzi); Duan, XM (Duan, Xuanming); Zheng, ML (Zheng, Meiling); Yang, FH (Yang, Fuhua)

Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 55 Issue: 41 Article Number: 415101 DOI: 10.1088/1361-6463/ac8430 Published: OCT 13 2022

Abstract: Arrays of dopant-induced quantum dots (QDs) are promising candidates as quantum bit platforms. We have achieved quantum transport spectroscopy of a junctionless silicon (Si) nanowire transistor with dual physical channels with a diameter of 10 nm fabricated by novel femtosecond laser projection exposure together with thermal oxidation. The spectroscopy demonstrates the evolution of the quantum transport process from Hubbard bands of dopant-induced QD array to one-dimensional (1D) conduction subbands. Eight pairs of current splitting peaks were observed at the initial stage of the drain current, representing the upper and lower Hubbard bands formed by the coupling of eight QDs. The current oscillation peaks in the 1D conduction subband elucidate the interference of reflected electron waves between the gate-defined barriers, which are proved by the mean wave vector interval matching the gate length. Our experimental results demonstrate the evolution of the quantum transport process in sub 10 nm dual Si channels with randomly doped dopant atoms, opening a new perspective for quantum states by dopant band engineering in Si nanoscale devices for scalable quantum computation.

Accession Number: WOS:000836441700001

ISSN: 0022-3727

eISSN: 1361-6463

Full Text: https://iopscience.iop.org/article/10.1088/1361-6463/ac8430