Author(s): Zhang, XF (Zhang, Xingfei); Li, ZC (Li, Zhicong); Zhang, YY (Zhang, Yiyun); Wang, XD (Wang, Xuedong); Yi, XY (Yi, Xiaoyan); Wang, GH (Wang, Guohong); Li, JM (Li, Jinmin)

Source: OPTICS EXPRESS Volume: 30 Issue: 15 Pages: 26676-26689 DOI: 10.1364/OE.462422 Published: JUL 18 2022

Abstract: Heterogeneous integration of nitrides on Si (100) is expected to open the door to the new possibilities for this material system in the fields of high-speed integrated photonics and information processing. In this work, GaN epitaxial layer grown on the patterned sapphire substrate is transferred onto Si (100) by a combination of wafer bonding, laser lift-off and chemical mechanical polishing (CMP) processes. The GaN epilayer transferred is uniformly thinned down to 800 nm with a root mean square surface roughness as low as 2.33 angstrom. The residual stress within the InGaN quantum wells transferred is mitigated by 79.4% after the CMP process. Accordingly, its emission wavelength exhibits a blue shift of 8.8 nm, revealing an alleviated quantum-confined Stark effect. Based on this platform, an array of microcavities with diverse geometrics and sizes are fabricated, by which optically-pumped green lasing at similar to 505.8 nm is achieved with a linewidth of similar to 0.48 nm from similar to 12 mu m microdisks. A spontaneous emission coupling factor of around 10(-4) is roughly estimated based on the light output characteristics with increasing the pumping densities. Lasing behaviors beyond the threshold suggest that the microdisk suffers less thermal effects as compared to its undercut counterparts. The electrically-injected microdisks are also fabricated, with a turn-on voltage of similar to 2.0 V and a leakage current as low as similar to 2.4 pA at -5 V. Being compatible with traditional semiconductor processing techniques, this work provides a feasible solution to fabricate large-area heterogeneously integrated optoelectronic devices based on nitrides. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement

Accession Number: WOS:000828676200061

ISSN: 1094-4087

Full Text: https://opg.optica.org/oe/fulltext.cfm?uri=oe-30-15-26676&id=478261