Author(s): Xu, SY (Xu, Siyuan); Liu, LN (Liu, Lining); Qu, GM (Qu, Guangming); Zhang, XF (Zhang, Xingfei); Jia, CY (Jia, Chunyang); Wu, SH (Wu, Songhao); Ma, YX (Ma, Yuanxiao); Lee, YJ (Lee, Young Jin); Wang, GD (Wang, Guodong); Park, JH (Park, Ji-Hyeon); Zhang, YY (Zhang, Yiyun); Yi, XY (Yi, Xiaoyan); Wang, YL (Wang, Yeliang); Li, JM (Li, Jinmin)

Source: APPLIED PHYSICS LETTERS Volume: 120 Issue: 15 Article Number: 153501 DOI: 10.1063/5.0086909 Published: APR 11 2022

Abstract: A fin field-effect transistor (FinFET) based on single beta-Ga2O3 nanowire with a diameter of similar to 60nm transferred to Si substrate is demonstrated. The FinFET device shows good saturation performance within a drain-to-source voltage up to 5 V and exhibits a high on/off ratio of similar to 4 x 10(8), a system-limit low leakage current (similar to 4fA), and a relatively low subthreshold swing (similar to 110 mV). Simulation shows that the channel of the FinFET depletes much faster than that of the back-gate FET with negative gate bias, which is consistent with the measurement results. Moreover, trap-related 1/f noise and 1/f(2) noise have been identified according to low frequency noise analysis, and a carrier number fluctuation is expected to be the dominant 1/f noise mechanism in the beta-Ga2O3 FinFET in this work. Published under an exclusive license by AIP Publishing.

Accession Number: WOS:000827465100004

ISSN: 0003-6951

eISSN: 1077-3118

Full Text: https://aip.scitation.org/doi/10.1063/5.0086909