Author(s): Qin, YB (Qin, Yanbin); Wang, Q (Wang, Quan); Chen, CX (Chen, Changxi); Xu, JK (Xu, Jiankai); Jiang, LJ (Jiang, Lijuan); Feng, C (Feng, Chun); Xiao, HL (Xiao, Hongling); Xu, XG (Xu, Xiangang); Wang, XL (Wang, Xiaoliang)

Source: JAPANESE JOURNAL OF APPLIED PHYSICS Volume: 61 Issue: 8 Article Number: 086503 DOI: 10.35848/1347-4065/ac5811 Published: AUG 1 2022

Abstract: Gamma-gate has been used to increase the breakdown voltage of radio frequency (RF) devices, and the damage caused by gate pin etching has been studied. In this study, a TiO2 layer, acting as a protective layer, was inserted between the AlGaN barrier layer and SiN passivation layer. The AlGaN/GaN high-electron-mobility transistor (HEMT) with TiO2 had no kink effect in its output characteristic, and at high gate voltages, it demonstrated a higher transconductance than the HEMT without TiO2. The HEMT without TiO2 exhibited a more prominent saturation tendency for drain current. Additionally, the C-V test data show that the trap state density of the AlGaN/GaN interface of an AlGaN/GaN HEMT with TiO2 decreased compared with a HEMT without TiO2. DC and C-V test results show that the TiO2 layer can effectively reduce the etching damage of the material under the gate. (C) 2022 The Japan Society of Applied Physics

Accession Number: WOS:000828865300001

ISSN: 0021-4922

eISSN: 1347-4065

Full Text: https://iopscience.iop.org/article/10.35848/1347-4065/ac5811