Author(s): Liu, LJ (Liu Li-Jie); Zhao, YW (Zhao You-Wen); Huang, Y (Huang Yong); Zhao, Y (Zhao Yu); Wang, J (Wang Jun); Wang, YL (Wang Ying-Li); Shen, GY (Shen Gui-Ying); Xie, H (Xie Hui)

Source: JOURNAL OF INFRARED AND MILLIMETER WAVES Volume: 41 Issue: 2 Pages: 420-424 DOI: 10.11972/j.issn.1001-9014.2022.02.006 Published: APR 2022

Abstract: Total reflection X-ray fluorescence spectroscopy???TXRF???and X-ray photo-electron spectroscopy???XPS???have been used to investigate residual impurities and oxides on polished InAs substrate surface wet cleanedby different solution combination.Metal impurities Si???K and Ca are routinely detected on the cleaned InAs sur???face and their concentration change with the variation of solution combination.A large quantity of particles???80nm size???is measured on the InAs substrate surface with higher residual impurity concentration.An effective wetchemical cleaning procedure is presented to prepare InAs substrate surface with less residual impurity???small parti???cle quantity and thin oxide layer???which are beneficial to high quality epitaxial growth

Accession Number: WOS:000813556100006

ISSN: 1001-9014

Full Text: http://journal.sitp.ac.cn/hwyhmb/hwyhmbcn/article/abstract/2021196