A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

Mid-Wavelength InAs/InAsSb Superlattice Photodetector With Background Limited Performance Temperature Higher Than 160 K

2022-08-01

 

Author(s): Huang, JL (Huang, Jianliang); Yan, SL (Yan, Shaolong); Xue, T (Xue, Ting); Zhang, YH (Zhang, Yanhua); Ma, WQ (Ma, Wenquan)

Source: IEEE TRANSACTIONS ON ELECTRON DEVICES DOI: 10.1109/TED.2022.3186648 Early Access Date: JUL 2022

Abstract: We report on a mid-wavelength (MW) type II superlattice (T2SL) photodetector using Ga-free InAs/InAsSb SL structure. X-ray diffraction (XRD) measurements indicate that the strained SL material is of very high quality. It is demonstrated that the background limited performance (BLIP) temperature of the detector is above 160 K and the dark current is dominated by the diffusion mechanism when temperature is above 160 K. At 77, 160, and 280 K, the 50% cutoff wavelength of the detector is 4.54, 4.89, and 5.56 mu m, respectively. The responsivity at the peak wavelength is 2.13 A/W at 77 K and is 2.16 A/W at 160 K. We also extract the Varshni parameters of the SL structure. The results indicate that the Ga-free SL structure is similar to InAs bulk material in terms of the Varshni parameters.

Accession Number: WOS:000824718700001

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

Ma, Wenquan                  0000-0002-3849-569X

Yan, Shaolong                  0000-0002-3479-2005

ISSN: 0018-9383

eISSN: 1557-9646

Full Text: https://ieeexplore.ieee.org/document/9815017/



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明