Author(s): Chen, JD (Chen, Jundong); Han, WH (Han, Weihua); Zhang, YB (Zhang, Yanbo); Zhang, XD (Zhang, Xiaodi); Ge, YD (Ge, Yandong); Guo, YY (Guo, Yangyan); Yang, FH (Yang, Fuhua)

Source: NANOSCALE DOI: 10.1039/d2nr02250h Early Access Date: JUL 2022

Abstract: Quantum transport in multi-channel silicon nanowire transistors presents enhanced data capacity and driving ability by overlapping current, which are essential for constructing quantum logic platforms. However, the overlapping behavior of the quantum transport through multi-channels remains elusive. Herein, we demonstrated bias-dependent hole transport spectroscopy from zero-dimensional (0D) to one-dimensional (1D) features in a lightly boron-doped multi-channel silicon nanowire transistor. The evolution of the initial 0D conductance peak splitting with source/drain bias voltages reveals the statistically distributed positions of single dopant atoms in multi-channels relative to the source or drain side. Two sets of 1D subbands are determined separately for heavy and light holes with different effective masses by measuring the positions of transconductance valleys, which have a negative shift with increasing bias voltage. Our results will benefit the practical utilization of silicon-based devices with atomic-level functionality in the field of quantum computation.

Accession Number: WOS:000828547000001

PubMed ID: 35866357

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

Chen, Jundong                  0000-0003-4473-5239

ISSN: 2040-3364

eISSN: 2040-3372

Full Text: https://pubs.rsc.org/en/content/articlelanding/2022/NR/D2NR02250H

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