Author(s): Xi, X (Xi, Xin); Chen, ZZ (Chen, Zhizhong); Zhao, LX (Zhao, Lixia); Chen, YY (Chen, Yiyong); Nie, JX (Nie, Jingxin); Deng, CH (Deng, Chuhan); Pan, ZJ (Pan, Zuojian); Zhang, HD (Zhang, Haodong); Kang, XN (Kang, Xiangning)

Source: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Article Number: 2200234 DOI: 10.1002/pssa.202200234 Early Access Date: JUL 2022

Abstract: Herein, a research is conducted on a AlGaN/GaN photoanode by depositing AlGaN with different thicknesses on the GaN epitaxial layer. The result shows that GaN with a thin AlGaN coating has significant enhancement on water-splitting performance. The photocurrent of GaN photoanode with 5 nm AlGaN layer can be enhanced by a factor of 1.8, compared with planar GaN. The high performance of the AlGaN/GaN heterojunction photoanode is mainly attributed to the high electron-hole density generated at the interface between GaN and AlGaN layers and the quantum tunneling transport of photogenerated carriers. The high concentration of carriers can not only enhance the mobility of carriers but also increase the electron-hole pairs for the water oxidation reaction. The quantum tunneling effect can facilitate the carriers through the high-energy barrier of AlGaN for photolysis reaction with electrolyte. Herein, a promising method for the application of GaN in efficient water splitting is provided.

Accession Number: WOS:000826199000001

ISSN: 1862-6300

eISSN: 1862-6319

Full Text: https://onlinelibrary.wiley.com/doi/10.1002/pssa.202200234