A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

A Multimode CMOS Vision Sensor With On-Chip Motion Direction Detection and Simultaneous Energy Harvesting Capabilities

2022-07-22

 

Author(s): Wu, JC (Wu, Jiangchao); Lu, X (Lu, Xin); Law, MK (Law, Man-Kay); Jiang, Y (Jiang, Yang); Liu, LY (Liu, Liyuan); Mak, PI (Mak, Pui-In); Martins, RP (Martins, Rui P.)

Source: IEEE SENSORS JOURNAL Volume: 22 Issue: 13 Pages: 12808-12819 DOI: 10.1109/JSEN.2022.3179394 Published: JUL 1 2022

Abstract: This work presents a 128 x 128 multi-function CMOS vision sensor with motion direction detection (MDD) and simultaneous energy harvesting (EH) capability, featuring: 1) light weight template-based optical flow (OF) algorithm for on-chip MDD with high energy efficiency and small area overhead; and 2) independent imaging and energy harvesting (EH) operations using vertically stacked N+/PW and PW/DNW+DNW/PSUB junctions without photodiode reconfiguration. Fabricated in 0.18 mu m standard CMOS, this work demonstrates the first CMOS vision sensor featuring both MDD and EH modes within a compact pixel pitch of 4.75 mu m. With a power consumption of 10.5 mu W at 15fps in MDD mode, the chip prototype achieves a motion sensing figure-of-merit (MS-FoM) of 171 pJ/pixel.frame, which is 30% better than the state-of-the-art MDD sensors. The proposed EH configuration achieves continuous power generation at 267pW/Ix/mm(2) irrespective of the imaging/MDD operation, demonstrating a 1.56x improvement over prior arts.

Accession Number: WOS:000819823500044

ISSN: 1530-437X

eISSN: 1558-1748

Full Text: https://ieeexplore.ieee.org/document/9789972



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明