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High-power laser diode at 9xx nm with 81.10% efficiency

2022-07-18

 

Author(s): Wang, L (Wang, Liang); Qu, HW (Qu, Hongwei); Qi, AY (Qi, Aiyi); Zhou, XY (Zhou, Xuyan); Zheng, WH (Zheng, Wanhua)

Source: OPTICS LETTERS Volume: 47 Issue: 13 Pages: 3231-3234 DOI: 10.1364/OL.452048 Published: JUL 1 2022

Abstract: In this study, a low-resistance, low-loss, continuously gradual composition extreme double asymmetric (CGC-EDAS) epitaxial structure is designed to improve efficiency. The structure and facet reflectivity of the broad area (BA) lasers are optimized to maximize the power conversion efficiency (PCE). In the experiment, the peak PCE of 75.36% is measured at 25 degrees C. At 0 degrees C, a peak PCE of 81.10% is measured and the PCE can still reach 77.84% at an output power of 17.10 W, which, to the best of our knowledge, is the highest value to date for any BA lasers. (C) 2022 Optica Publishing Group

Accession Number: WOS:000821139500024

PubMed ID: 35776593

ISSN: 0146-9592

eISSN: 1539-4794

Full Text: https://opg.optica.org/ol/fulltext.cfm?uri=ol-47-13-3231&id=477280



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