Author(s): Li, Q (Li, Qiang); Zhang, QF (Zhang, Qifan); Chen, RS (Chen, Ransheng); Zhang, HR (Zhang, Haoran); Wang, MD (Wang, Mingdi); Zhu, JP (Zhu, Jingping); Wang, XL (Wang, Xiaoliang); Liu, YH (Liu, Yuhuai); Yun, F (Yun, Feng)

Source: CRYSTALS Volume: 12 Issue: 6 Article Number: 777 DOI: 10.3390/cryst12060777 Published: JUN 2022

Abstract: Fe-doped hBN film has great potential for use in spintronic applications. The wafer scale preparation of Fe-doped hBN films and their material properties are crucial for application in devices. In this work, Fe-doped films with 2-inch wafer scale were fabricated by magnetron co-sputtering, and the properties of the films were characterized. The crystal quality decreased, but the electrical performance was greatly improved. The average square resistance of Fe-doped film was 0.34 K Omega/sqr. Meanwhile, the Fe-doped films kept the characteristics of hBN well. The wavelength of absorption edge was 216 nm, and the corresponding optical band gap of 5.76 eV.

Accession Number: WOS:000818299400001

eISSN: 2073-4352

Full Text: https://www.mdpi.com/2073-4352/12/6/777