Author(s): Hu, TG (Hu, Tiangui); Liu, C (Liu, Chang); Liu, J (Liu, Jian)

Source: JOURNAL OF THE ELECTROCHEMICAL SOCIETY Volume: 169 Issue: 6 Article Number: 066514 DOI: 10.1149/1945-7111/ac7add Published: JUN 1 2022

Abstract: Nanostructured GaN has many advantages in water splitting, such as stronger light absorption, shorter migration distance and more reactive sites. Here, we have introduced a conical nanostructured GaN with the significant improvement of water splitting performance. The fabrication method is simple without any extra mask, including electrochemical etching and ICP etching only, which largely reduces the complexity and cost for fabricating nanostructured GaN. By making use of the large number of pores formed in electrochemical etching, a conical GaN nanostructure can be prepared using ICP etching afterwards. Compared with the control planar GaN, the reflectivity of the conical GaN decreases by similar to 2.57 times, indicating the light absorption of the conical GaN increases significantly. The corresponding water splitting current density of the conical GaN has also been measured, which is 0.69 mA cm(-2) at 1 V, similar to 6.27 times higher than that of control planar GaN (0.11 mA cm(-2)). Our work provides a simple method to fabricate high-performance nanostructured GaN, and broadens the application of III-nitrides for efficient energy storage and conversion.

Accession Number: WOS:000819147100001

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

Hu, Tiangui                  0000-0002-2391-613X

ISSN: 0013-4651

eISSN: 1945-7111

Full Text: https://iopscience.iop.org/article/10.1149/1945-7111/ac7add