Author(s): Qu, GM (Qu, Guangming); Xu, SY (Xu, Siyuan); Liu, LN (Liu, Lining); Tang, ML (Tang, Minglei); Wu, SH (Wu, Songhao); Jia, CY (Jia, Chunyang); Zhang, XF (Zhang, Xingfei); Song, WR (Song, Wurui); Lee, YJ (Lee, Young Jin); Xu, JL (Xu, Jianlong); Wang, GD (Wang, Guodong); Ma, YX (Ma, Yuanxiao); Park, JH (Park, Ji-Hyeon); Zhang, YY (Zhang, Yiyun); Yi, XY (Yi, Xiaoyan); Wang, YL (Wang, Yeliang); Li, JM (Li, Jinmin)

Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY Volume: 37 Issue: 8 Article Number: 085009 DOI: 10.1088/1361-6641/ac6f7b Published: AUG 1 2022

Abstract: In this work, a normally-on single-monocrystal beta-Ga2O3 nanowire (NW) back-gate field-effect transistor (FET) has been demonstrated by transferring metal-organic chemical vapor deposition-grown beta-Ga2O3 NWs on sapphire onto SiO2 (300 nm)/p(+)-Si substrate. When the gate voltage (V-G) exceeds -14 V, the device is pinched off, with an on/off ratio greater than 10(8) and a drain leakage current density as low as similar to 7.34 fA. The maximum field-effect carrier mobility for these n-doped single beta-Ga2O3 NW FETs reaches similar to 62.2 cm(2) (V s)(-1). A prompt degradation in the on/off ratio for these beta-Ga2O3 NW back-gate FETs is observed as the operation temperature increased up to 400 K. With strong evidence, the temperature-dependent degradation in the performance is determined by the activation of self-trapped holes and intrinsic vacancy-related defects, both of which would lead to a rapid increase in the channel leakage current at high temperatures.

Accession Number: WOS:000816875400001

ISSN: 0268-1242

eISSN: 1361-6641

Full Text: https://iopscience.iop.org/article/10.1088/1361-6641/ac6f7b