Author(s): Fu, T (Fu, Ting); Qi, AY (Qi, Aiyi); Chen, JX (Chen, Jingxuan); Wang, YF (Wang, Yufei); Zhou, XY (Zhou, Xuyan); Wang, XY (Wang, Xueyou); Dai, YQ (Dai, Yingqiu); Wang, MJ (Wang, Mingjin); Zheng, WH (Zheng, Wanhua)

Source: OPTICS LETTERS Volume: 47 Issue: 12 Pages: 2991-2994 DOI: 10.1364/OL.459993 Published: JUN 15 2022

Abstract: Electrically injected supersymmetric (SUSY) semiconductor lasers are proposed and fabricated. Two successive SUSY transformations are applied to the main array arranged along the direction of epitaxial growth, which can remove the propagation constants of the fundamental mode and the leaky mode of the main array from the superpartner while keeping those of other high-order modes. The SUSY laser possesses an excellent mode discrimination and favors the lasing of the fundamental mode. The fabricated SUSY laser can emit light with a single-lobe vertical far-field pattern with the full width at half maximum of 16.87 degrees under an injection current of 1.4 A. (C) 2022 Optica Publishing Group

Accession Number: WOS:000812307400014

PubMed ID: 35709033

ISSN: 0146-9592

eISSN: 1539-4794

Full Text: https://opg.optica.org/ol/abstract.cfm?uri=ol-47-12-2991