Author(s): Zhao, YQ (Zhao, Yongqiang); Liu, W (Liu, Wen); Bao, YD (Bao, Yidi); Yang, FH (Yang, Fuhua); Wang, XD (Wang, Xiaodong)

Source: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Volume: 143 Article Number: 106481 DOI: 10.1016/j.mssp.2022.106481 Published: JUN 1 2022

Abstract: Bonded GaAs/Si heterojunctions with high mechanical strength and electrical conductivity are important for low-cost photovoltaics and silicon-based photonics. In this work, we successfully achieved wafer-based (2 in.) GaAs/Si direct bonding structures with high strength by using the plasma-activated bonding (PAB) method. The bonding strength can be close to that of the GaAs/Si samples bonded by the surface-activated bonding method. It is found that the surface roughness and height of GaAs wafers have a greater influence on the bonding strength than Si wafers. More importantly, an ohmic n-GaAs/n-Si interface even with a low doping concentration of wafers was realized. Investigations reveal that the Ar plasma-induced damage in GaAs could be controlled at a significantly low level by using the PAB method. An thin amorphous layer existed between GaAs/Si interface, and no obvious cracks or voids were observed. Our results may provide a promising way to fabricate GaAs/Si heterojunctions for optoelectronic devices.

Accession Number: WOS:000804831300006

ISSN: 1369-8001

eISSN: 1873-4081

Full Text: https://www.sciencedirect.com/science/article/pii/S1369800122000312?via%3Dihub