A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

Anchored SnS nanorods based on a carbon-enhanced Nb2CTx three-dimensional nanoflower framework achieve stable, high capacity Na-ion storage

2022-06-24

 

Author(s): Yuan, ZY (Yuan, Zeyu); Cao, JM (Cao, Junming); Li, DD (Li, DongDong); Wei, W (Wei, Wei); Wang, LL (Wang, Lili); Han, W (Han, Wei)

Source: APPLIED SURFACE SCIENCE Volume: 597 Article Number: 153598 DOI: 10.1016/j.apsusc.2022.153598 Published: SEP 30 2022

Abstract: Tin (Sn) and its derivatives have outstanding theoretical capacities; however, the phase transformation and alloying processes of SnSx in sodium-ion batteries (SIBs) greatly hinder their application. Compared with hexagonal SnS2, orthorhombic SnS exhibits a better structural stability and a smaller volume expansion, while undergoing a less severe conversion reaction. Thus, it can achieve better sodium-ion storage performance. Herein, we designed a strategy to grow SnS nanorods in situ on a Nb2CTx framework and three-dimensional (3D) carbon-reinforced Nb2CTx/SnS nanorods (C@SnS@Nb2CTx/Nb2O5). With the reducibility of Nb2CTx, hexagonal SnS2 can be transformed into a more stable orthorhombic SnS phase, thereby affording a more stable performance for SIBs. The resulting C@SnS@Nb2CTx/Nb2O5 electrodes exhibited excellent cycle capacities after 100 cycles at 0.1 A.g(-1) (similar to 384 mAh.g(-1)) and after 1,000 cycles at 1 A.g(-1) (similar to 220 mAh.g(-1)); they also exhibited excellent stability (73% capacity retention after 1,000 cycles, relative to the tenth cycle at a current density of 1 A.g(-1)). In addition, to analyze the underlying mechanism of the observed capacity decay in the cycle process, we conducted ex situ X-ray photoelectron spectroscopy, X-ray diffraction, and density-functional theory analyses. Thus, we compared and revealed the factors influencing the capacity decline observed during the SnS cycle process.

Accession Number: WOS:000807343200003

ISSN: 0169-4332

eISSN: 1873-5584

Full Text: https://www.sciencedirect.com/science/article/pii/S0169433222011503?via%3Dihub



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明