Author(s): Zhang, G (Zhang, Gai); Wang, B (Wang, Bing); Jia, T (Jia, Tong); Chu, CS (Chu, Chunshuang); Fan, C (Fan, Chao); Zhang, YH (Zhang, Yonghui); Zhang, XP (Zhang, Xiangpeng); Liu, NX (Liu, Naixin); Zhang, ZH (Zhang, Zi-Hui); Yan, J (Yan, Jiancahng)

Source: OPTICS EXPRESS Volume: 30 Issue: 11 Pages: 17781-17788 Article Number: 456758 DOI: 10.1364/OE.456758 Published: MAY 23 2022

Abstract: Low light extraction efficiency (LEE), high forward voltage and severe self-heating effect greatly affect the performance for AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). In this work, surface-textured Ga-face n-AlGaN is fabricated low-costly using self-assembled SiO2 nanosphere as hard mask. The experimental results manifest that when compared with conventional DUV LEDs, the optical power, the forward voltage and the thermal characteristics for the DUV LEDs with surface-textured Ga-face n-AlGaN are improved obviously. It is because the surface-textured Ga-face n-AlGaN between mesa and the n-electrode can be used as the scattering center for trapped light, and this leads to the enhanced LEE. Furthermore, thanks to the surface-textured n-AlGaN under the n-electrode, the n-type ohmic contact area can be increased effectively. Therefore, the n-type ohmic contact resistance can be reduced and the better heat dissipation can be attained for the proposed flip-chip DUV LED. (c) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement

Accession Number: WOS:000799725400010

ISSN: 1094-4087

Full Text: https://opg.optica.org/oe/fulltext.cfm?uri=oe-30-11-17781&id=472669