Author(s): Yang, W (Yang, Wen); Xiong, T (Xiong, Tao); Liu, YY (Liu, Yue-Yang); Yang, JH (Yang, Juehan); Xu, Q (Xu, Qun); Wei, ZM (Wei, Zhongming)

Source: SMALL STRUCTURES Article Number: 2200061 DOI: 10.1002/sstr.202200061 Early Access Date: JUN 2022

Abstract: Quasi-1D ternary semiconductors have attracted considerable attention recently because of their additional bandgap engineering deriving from the variable stoichiometry. Herein, SbBiS3 single crystals are successfully synthesized by chemical vapor transport (CVT) method. The basic characterizations combined with theoretical calculations reveal that SbBiS3 semiconductor has an intrinsically low symmetry structure and in-plane anisotropy of optical absorption. Significantly, the bandgap of SbBiS3 shows a blue-shifted compared to the bandgaps of binary Sb2S3 and Bi2S3. Moreover, the quasi-1D SbBiS3-based photodetector shows a wide-spectrum photosensitivity (360-1064 nm), a fast response speed (tau(rise) approximate to 10 mu s and tau(decay) approximate to 94 mu s) at 532 nm, a high photoresponsivity (6.82 A W-1) at 360 nm. In addition, the photodetector exhibits an anisotropic photocurrent ratio up to 1.12 at 808 nm. The work demonstrates the SbBiS3 prepared by cationic alloy is a promising candidate for the application of polarized optoelectronics.

Accession Number: WOS:000806005500001

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

wei, zhong ming                  0000-0002-6237-0993

eISSN: 2688-4062

Full Text: https://onlinelibrary.wiley.com/doi/10.1002/sstr.202200061