Author(s): Xu, GY (Xu, Guoyin); Cong, H (Cong, Hui); Wan, FS (Wan, Fengshuo); Wang, XY (Wang, Xiaoyu); Xie, CJ (Xie, Changjiang); Xu, C (Xu, Chi); Xue, CL (Xue, Chunlai)

Source: IEEE PHOTONICS TECHNOLOGY LETTERS Volume: 34 Issue: 10 Pages: 517-520 DOI: 10.1109/LPT.2022.3168308 Published: MAY 15 2022

Abstract: Short wave infrared (SWIR) imaging has been used in various applications such as electronic board inspection, surveillance and gas detection. Unlike the conventional compound semiconductor focal plane array (FPA), in this work group IV back-illuminated imaging array with 320 x 256 pixels was demonstrated. For reference device with a diameter of 30 mu m, the dark current was 9.7 nA at 0 V. At 1550 nm, a responsivity of 0.61 A/W was obtained at -1 V using a Ge photodetector with a diameter of 75 mu m. The image of a halogen lamp was successfully captured at room temperature with a pixel operating bias of 0 V. Showing great compatibility with the existing CMOS technology, group IV imaging array becomes one of the promising candidates to be applied in SWIR imaging area.

Accession Number: WOS:000788996600003

ISSN: 1041-1135

eISSN: 1941-0174

Full Text: https://ieeexplore.ieee.org/document/9761884