Author(s): Pan, D (Pan, Dong); Song, HD (Song, Huading); Zhang, S (Zhang, Shan); Liu, L (Liu, Lei); Wen, LJ (Wen, Lianjun); Liao, DY (Liao, Dunyuan); Zhuo, R (Zhuo, Ran); Wang, ZC (Wang, Zhichuan); Zhang, ZT (Zhang, Zitong); Yang, S (Yang, Shuai); Ying, JH (Ying, Jianghua); Miao, WT (Miao, Wentao); Shang, RN (Shang, Runan); Zhang, H (Zhang, Hao); Zhao, JH (Zhao, Jianhua)

Source: CHINESE PHYSICS LETTERS Volume: 39 Issue: 5 Article Number: 058101 DOI: 10.1088/0256-307X/39/5/058101 Published: APR 1 2022

Abstract: We demonstrate the in situ growth of ultra-thin InAs nanowires with an epitaxial Al film by molecular-beam epitaxy. Our InAs nanowire diameter (similar to 30 nm) is much thinner than before (similar to 100 nm). The ultra-thin InAs nanowires are pure phase crystals for various different growth directions. Transmission electron microscopy confirms an atomically abrupt and uniform interface between the Al shell and the InAs wire. Quantum transport study on these devices resolves a hard induced superconducting gap and 2e-periodic Coulomb blockade at zero magnetic field, a necessary step for future Majorana experiments. By reducing wire diameter, our work presents a promising route for reaching fewer sub-band regime in Majorana nanowire devices.

Accession Number: WOS:000785681600001

ISSN: 0256-307X

eISSN: 1741-3540

Full Text: https://iopscience.iop.org/article/10.1088/0256-307X/39/5/058101