Detecting the non-magnetism and magnetism switching of point defects in graphene at the atomic scale
Author(s): Wang, TT (Wang, Tiantian); Zou, YX (Zou, Yuxiao); Shi, YR (Shi, Yurong); Wang, X (Wang, Xin); Wang, F (Wang, Fang); Song, GF (Song, Guofeng); Fang, WH (Fang, Weihai); Liu, Y (Liu, Ying)
Source: APPLIED SURFACE SCIENCE Volume: 586 Article Number: 152652 DOI: 10.1016/j.apsusc.2022.152652 Published: JUN 1 2022
Abstract: Magnetic and non-magnetic point defects are created by irradiating energetic Ar ions on bilayer epitaxial graphene/SiC(0001), and their atomic and electronic structures are studied using scanning tunneling microscopy (STM) and q-Plus atomic force microscopy(q-Plus AFM). A strong Kondo resonance peak is observed for magnetic impurities in dI/dV spectra, with a proposed Kondo temperature of 314 K. Magnetic scatters produce stronger quasi-particle quantum interference patterns. Structural transformation between the magnetic and non-magnetic defects is observed during atomic-scale characterizations, inducing magnetic switching of the atomic imperfections. Meanwhile, using force spectra, the atomic force driving the transformations is determined to be 22 nN. This discovery paves a way for designing magnetic logic devices through graphene defect engineering at atomic scale.
Accession Number: WOS:000784442100004
ISSN: 0169-4332
eISSN: 1873-5584
Full Text: https://www.sciencedirect.com/science/article/pii/S0169433222002343?via%3Dihub