Sn composition graded GeSn photodetectors on Si substrate with cutoff wavelength of 3.3 mu m for mid-infrared Si photonics
Author(s): Li, MM (Li, Mingming); Zheng, J (Zheng, Jun); Liu, XQ (Liu, Xiangquan); Zhu, YP (Zhu, Yupeng); Niu, CQ (Niu, Chaoqun); Pang, YQ (Pang, Yaqing); Liu, Z (Liu, Zhi); Zuo, YH (Zuo, Yuhua); Cheng, BW (Cheng, Buwen)
Source: APPLIED PHYSICS LETTERS Volume: 120 Issue: 12 Article Number: 121103 DOI: 10.1063/5.0084940 Published: MAR 21 2022
Abstract: The Sn composition graded GeSn layer with Sn content increased from 11% to 14.3% was grown on a Si substrate by molecular beam epitaxy. The structural properties of the GeSn layer are investigated, and the film is gradually relaxed along the thickness, reaching approximately 71.6%. The GeSn p-i-n detectors were fabricated by using a complementary metal oxide semiconductor compatible process. The GeSn detectors demonstrated a cutoff wavelength of approximately 3.3 mu m at room temperature with a dark current of 0.3 A/cm(2) @ -1 V. At a wavelength of 2000 nm, the GeSn detectors had a responsivity of 110 mA/W and -3 dB bandwidth (f(3 dB)) about 3 GHz. These results suggest that high Sn content relax GeSn can be grown by MBE and paves the way toward the feasibility of mid-infrared GeSn photonics.& nbsp;Published under an exclusive license by AIP Publishing.
Accession Number: WOS:000780210100002
ISSN: 0003-6951
eISSN: 1077-3118
