Room temperature continuous-wave operated 2.0-W GaN-based ultraviolet laser diodes
Author(s): Yang, J (Yang, Jing); Zhao, DG (Zhao, De-Gang); Liu, ZS (Liu, Zong-Shun); Wang, BB (Wang, Baibin); Zhang, YH (Zhang, Yu-Heng); Zhang, ZZ (Zhang, Zhen-Zhuo); Chen, P (Chen, Ping); Liang, F (Liang, Feng)
Source: OPTICS LETTERS Volume: 47 Issue: 7 Pages: 1666-1668 DOI: 10.1364/OL.454340 Published: APR 1 2022
Abstract: Temperature characteristics of near-UV laser diodes (LDs) with a lasing wavelength of 384nm are investigated. The characteristic temperature of threshold current (T-0) of the UV LDs is low. Thus, the performance of the UV LDs under continuous wave (CW) operation is not as good as under pulsed operation especially at a high injection current. In addition, it is found that self-heating is a key factor for CW characteristics of the UV LDs, where suppression of the self-heating by using thick waveguide layers can increase the critical current of thermal rollover of the UVLD's operation. A high CW output power of 2.0 W is achieved for an InGaN near-UV LD with the n-side down on a sub-mount, whose threshold current density is 1.27 kA/cm(2) and the highest wall plug efficiency (WPE) is approximately 15.9% at an injection current of 1.2 A. (C) 2022 Optica Publishing Group
Accession Number: WOS:000778798800025
PubMed ID: 35363704
ISSN: 0146-9592
eISSN: 1539-4794
Full Text: https://opg.optica.org/ol/fulltext.cfm?uri=ol-47-7-1666&id=470701