A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

Room temperature continuous-wave operated 2.0-W GaN-based ultraviolet laser diodes

2022-04-22

 

Author(s): Yang, J (Yang, Jing); Zhao, DG (Zhao, De-Gang); Liu, ZS (Liu, Zong-Shun); Wang, BB (Wang, Baibin); Zhang, YH (Zhang, Yu-Heng); Zhang, ZZ (Zhang, Zhen-Zhuo); Chen, P (Chen, Ping); Liang, F (Liang, Feng)

Source: OPTICS LETTERS Volume: 47 Issue: 7 Pages: 1666-1668 DOI: 10.1364/OL.454340 Published: APR 1 2022

Abstract: Temperature characteristics of near-UV laser diodes (LDs) with a lasing wavelength of 384nm are investigated. The characteristic temperature of threshold current (T-0) of the UV LDs is low. Thus, the performance of the UV LDs under continuous wave (CW) operation is not as good as under pulsed operation especially at a high injection current. In addition, it is found that self-heating is a key factor for CW characteristics of the UV LDs, where suppression of the self-heating by using thick waveguide layers can increase the critical current of thermal rollover of the UVLD's operation. A high CW output power of 2.0 W is achieved for an InGaN near-UV LD with the n-side down on a sub-mount, whose threshold current density is 1.27 kA/cm(2) and the highest wall plug efficiency (WPE) is approximately 15.9% at an injection current of 1.2 A. (C) 2022 Optica Publishing Group

Accession Number: WOS:000778798800025

PubMed ID: 35363704

ISSN: 0146-9592

eISSN: 1539-4794

Full Text: https://opg.optica.org/ol/fulltext.cfm?uri=ol-47-7-1666&id=470701



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明