Author(s): Wang, FX (Wang, Fengxuan); Yang, X (Yang, Xiang); Zhao, YQ (Zhao, Yongqiang); Wu, JM (Wu, Jingmin); Guo, ZY (Guo, Zhiyu); He, Z (He, Zhi); Fan, ZC (Fan, Zhongchao); Yang, FH (Yang, Fuhua)

Source: APPLIED SCIENCES-BASEL Volume: 12 Issue: 7 Article Number: 3261 DOI: 10.3390/app12073261 Published: APR 2022

Abstract: We investigated the low-temperature direct bonding of SiC/Si via O-2 plasma activation. After optimization, a high bonding efficiency of over 90% was obtained. Surface activation was achieved via reactive ion etching (RIE) O-2 plasma for 30 s without significant bombardment damage. A smooth and void-free interface was observed by transmission electron microscopy (TEM), while a significant amorphous oxide layer was also detected. By increasing the annealing temperature from 150 to 300 degrees C, the amorphous layer decreased drastically from 48 nm to 11 nm. Based on systematic experiments and analysis, the mechanism of SiC/Si low-temperature plasma-activated bonding was discussed.

Accession Number: WOS:000780546700001

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

Wang, Fengxuan                  0000-0003-3974-785X

eISSN: 2076-3417

Full Text: https://www.mdpi.com/2076-3417/12/7/3261