Author(s): Shang, XJ (Shang, Xiangjun); Li, SL (Li, Shulun); Liu, HQ (Liu, Hanqing); Su, XB (Su, Xiangbin); Hao, HM (Hao, Huiming); Dai, DY (Dai, Deyan); Li, XM (Li, Xiaoming); Li, YY (Li, Yuanyuan); Gao, YF (Gao, Yuanfei); Dou, XM (Dou, Xiuming); Ni, HQ (Ni, Haiqiao); Niu, ZC (Niu, Zhichuan)

Source: NANOMATERIALS Volume: 12 Issue: 7 Article Number: 1219 DOI: 10.3390/nano12071219 Published: APR 2022

Abstract: In this work, we develop single-mode fiber devices of an InAs/GaAs quantum dot (QD) by bonding a fiber array with large smooth facet, small core, and small numerical aperture to QDs in a distributed Bragg reflector planar cavity with vertical light extraction that prove mode overlap and efficient output for plug-and-play stable use and extensive study. Modulated Si doping as electron reservoir builds electric field and level tunnel coupling to reduce fine-structure splitting (FSS) and populate dominant XX and higher excitons XX+ and XXX. Epoxy package thermal stress induces light hole (lh) with various behaviors related to the donor field: lh h(1) confined with more anisotropy shows an additional X-Z line (its space to the traditional X lines reflects the field intensity) and larger FSS; lh h(2) delocalized to wetting layer shows a fast h(2)-h(1) decay; lh h(2) confined shows D-3h symmetric higher excitons with slow h(2)-h(1) decay and more confined h(1) to raise h(1)-h(1) Coulomb interaction.

Accession Number: WOS:000781387800001

PubMed ID: 35407336

eISSN: 2079-4991

Full Text: https://www.mdpi.com/2079-4991/12/7/1219